JPS6226573B2 - - Google Patents

Info

Publication number
JPS6226573B2
JPS6226573B2 JP54133437A JP13343779A JPS6226573B2 JP S6226573 B2 JPS6226573 B2 JP S6226573B2 JP 54133437 A JP54133437 A JP 54133437A JP 13343779 A JP13343779 A JP 13343779A JP S6226573 B2 JPS6226573 B2 JP S6226573B2
Authority
JP
Japan
Prior art keywords
film
semiconductor substrate
electrode
melting point
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54133437A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5658229A (en
Inventor
Tooru Mochizuki
Yoshio Nishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Original Assignee
CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHO ERU ESU AI GIJUTSU KENKYU KUMIAI filed Critical CHO ERU ESU AI GIJUTSU KENKYU KUMIAI
Priority to JP13343779A priority Critical patent/JPS5658229A/ja
Publication of JPS5658229A publication Critical patent/JPS5658229A/ja
Publication of JPS6226573B2 publication Critical patent/JPS6226573B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP13343779A 1979-10-16 1979-10-16 Manufacture of semiconductor device Granted JPS5658229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13343779A JPS5658229A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13343779A JPS5658229A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5658229A JPS5658229A (en) 1981-05-21
JPS6226573B2 true JPS6226573B2 (en]) 1987-06-09

Family

ID=15104744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13343779A Granted JPS5658229A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5658229A (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5832415A (ja) * 1981-08-20 1983-02-25 Sanyo Electric Co Ltd コンタクト抵抗低減方法
JPS5861669A (ja) * 1981-10-09 1983-04-12 Toshiba Corp 半導体装置の製造方法
JPS58188157A (ja) * 1982-04-28 1983-11-02 Toshiba Corp 半導体装置およびその製造方法
JPH0658899B2 (ja) * 1982-07-29 1994-08-03 株式会社東芝 半導体装置の製造方法
JPS5954267A (ja) * 1982-09-21 1984-03-29 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH0748493B2 (ja) * 1987-06-22 1995-05-24 日本電気株式会社 半導体装置及びその製造方法
JP2002360340A (ja) * 2001-06-08 2002-12-17 Azuma Industrial Co Ltd 目地用清掃ブラシ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258463A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Production of semiconductor device

Also Published As

Publication number Publication date
JPS5658229A (en) 1981-05-21

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